Solmi, Sandro: search on Z-Library

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1

Evolution of Monoclinic SiAs Precipitates in Heavily As+ Implanted and Isothermally Annealed Silicon

Armigliato, A., Parisini, A., Derdour, M., Lazzari, P., Moro, L., Nobili, D., Solmi, Sandro

Journal:

Solid State Phenomena

Year:

1991

File:

PDF, 483 KB

1991

2

Clustering Equilibrium and Deactivation Kinetics in As doped Si

Nobili, Dario, Solmi, Sandro, Shao, Jenta, Merli, Marco

Journal:

MRS Proceedings

Year:

2000

Language:

english

File:

PDF, 60 KB

english, 2000

3

Issues on boron electrical activation in silicon: Experiments on boron clusters and shallow junctions formation

Giovanni Mannino, Vittorio Privitera, Sandro Solmi, Nicholas E.B Cowern

Journal:

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Year:

2002

Language:

english

File:

PDF, 961 KB

english, 2002

4

Analysis of the Electron Traps at the 4H-SiC/SiO2 Interface of a Gate Oxide Obtained by Wet Oxidation of a Nitrogen Pre-Implanted Layer

Pintilie, Ioana, Moscatelli, Francesco, Nipoti, Roberta, Poggi, Antonella, Solmi, Sandro, Svensson, Bengt G.

Journal:

Materials Science Forum

Year:

2009

Language:

english

File:

PDF, 384 KB

english, 2009

5

Shallow junctions for ULSI technology

Sandro Solmi, Renato Angelucci, Marco Merli

Journal:

Transactions on Emerging Telecommunications Technologies

Year:

1990

Language:

english

File:

PDF, 701 KB

english, 1990

6

Non-Nitridated Oxides: Abnormal Behaviour of N-4H-SiC/SiO2 Capacitors at Low Temperature Caused by near Interface States

Pintilie, Ioana, Moscatelli, Francesco, Nipoti, Roberta, Poggi, Antonella, Solmi, Sandro, Løvlie, Lars S., Svensson, Bengt G.

Journal:

Materials Science Forum

Year:

2011

Language:

english

File:

PDF, 311 KB

english, 2011

7

Counterdoped very shallow p[sup +]/n junctions obtained by B and Sb implantation and codiffusion in Si

Journal:

Journal of Applied Physics

Year:

1998

Language:

english

File:

PDF, 350 KB

english, 1998

8

Dopant Anomalous Diffusion Induced in Silicon by Ion Implantation

Solmi, Sandro, Servidori, Marco

Journal:

Solid State Phenomena

Year:

1988

Language:

english

File:

PDF, 1.03 MB

english, 1988

9

Dependence of the Transient Enhanced Diffusion, of B in Si, upon B Concentration and Ion Implanted Dose

Solmi, Sandro, Mannino, G., Servidori, Marco, Bersani, M., Mancini, L., Milita, S., Privitera, Vittorio, Anderle, M.

Journal:

Solid State Phenomena

Year:

2002

File:

PDF, 495 KB

2002

10

Characterization of a Thermal Oxidation Process on SiC Preamorphized by Ar Ion Implantation

Poggi, Antonella, Nipoti, Roberta, Solmi, Sandro, Bersani, M., Vanzetti, L.

Journal:

Materials Science Forum

Year:

2004

Language:

english

File:

PDF, 219 KB

english, 2004

11

Dependence of Phosphorus Transient Enhanced Diffusion on Depth Position of Extended Defects in Ion Implanted Silicon

Zaumseil, P., Winter, U., Fabbri, R., Servidori, Marco, Solmi, Sandro

Journal:

Solid State Phenomena

Year:

1989

Language:

english

File:

PDF, 457 KB

english, 1989

12

Fabrication of MOS Capacitors by Wet Oxidation of p-Type 4H-SiC Preamorphized by Nitrogen Ion Implantation

Hijikata, Yasuto, Yoshida, Sadafumi, Moscatelli, Francesco, Poggi, Antonella, Solmi, Sandro, Cristiani, Stefano, Nipoti, Roberta

Journal:

Materials Science Forum

Year:

2007

Language:

english

File:

PDF, 225 KB

english, 2007

13

Features of arsenic clusters in silicon

Dario Nobili, Sandro Solmi

Journal:

physica status solidi (c)

Year:

2005

Language:

english

File:

PDF, 171 KB

english, 2005

14

Effects of N Implantation before Gate Oxidation on the Performance of 4H-SiC MOSFET

Poggi, Antonella, Moscatelli, Francesco, Solmi, Sandro, Nipoti, Roberta, Tamarri, Fabrizio, Pizzochero, G.

Journal:

Materials Science Forum

Year:

2009

Language:

english

File:

PDF, 296 KB

english, 2009

15

Boron-Interstitial Cluster Kinetics: Extraction of Binding Energies from Dedicated Experiments

Ortiz, Christophe J., Pichler, Peter, Häaublein, Volker, Mannino, Giovanni, Scalese, Silvia, Privitera, Vittorio, Solmi, Sandro, Lerch, Wilfried

Journal:

MRS Proceedings

Year:

2004

Language:

english

File:

PDF, 693 KB

english, 2004

16

The Influence of Excess Nitrogen, on the Electrical Properties of the 4H-SiC/SiO2 Interface

Pintilie, Ioana, Moscatelli, Francesco, Nipoti, Roberta, Poggi, Antonella, Solmi, Sandro, Løvlie, Lars S., Svensson, Bengt G.

Journal:

Materials Science Forum

Year:

2011

Language:

english

File:

PDF, 405 KB

english, 2011

17

Ion Implanted p+/n 4H-SiC Junctions: effect of the Heating Rate during Post Implantation Annealing

Nipoti, Roberta, Carnera, Alberto, Bergamini, Fabio, Canino, Mariaconcetta, Poggi, Antonella, Solmi, Sandro, Passini, Mara

Journal:

MRS Proceedings

Year:

2006

Language:

english

File:

PDF, 257 KB

english, 2006

18

Improvement of Electron Channel Mobility in 4H SiC MOSFET by Using Nitrogen Implantation

Moscatelli, Francesco, Nipoti, Roberta, Solmi, Sandro, Cristiani, Stefano, Sanmartin, Michele, Poggi, Antonella

Journal:

Materials Science Forum

Year:

2009

Language:

english

File:

PDF, 327 KB

english, 2009

19

Competition between Oxidation and Recrystallization in Ion Amorphized (0001) 6H-SiC

Poggi, Antonella, Parisini, A., Solmi, Sandro, Nipoti, Roberta

Journal:

Materials Science Forum

Year:

2005

Language:

english

File:

PDF, 420 KB

english, 2005

20

Passivation by N Implantation of the SiO2/SiC Acceptor Interface States: Impact on the Oxide Hole Traps and the Gate Oxide Reliability

Poggi, Antonella, Moscatelli, Francesco, Solmi, Sandro, Nipoti, Roberta

Journal:

MRS Proceedings

Year:

2010

Language:

english

File:

PDF, 98 KB

english, 2010

21

Characterization of MOS Capacitors Fabricated on n-type 4H-SiC Implanted with Nitrogen at High Dose

Poggi, Antonella, Moscatelli, Francesco, Hijikata, Yasuto, Solmi, Sandro, Sanmartin, Michele, Tamarri, Fabrizio, Nipoti, Roberta

Journal:

Materials Science Forum

Year:

2007

Language:

english

File:

PDF, 368 KB

english, 2007

22

Characterization of Phosphorus Implanted n+/p Junctions Integrated as Source/Drain Regions in a 4H-SiC n-MOSFET

Moscatelli, Francesco, Nipoti, Roberta, Poggi, Antonella, Solmi, Sandro, Cristiani, Stefano, Sanmartin, Michele

Journal:

Materials Science Forum

Year:

2009

Language:

english

File:

PDF, 303 KB

english, 2009

23

Analysis of the Electrical Activation of P+ Implanted Layers as a Function of the Heating Rate of the Annealing Process

Canino, Mariaconcetta, Giannazzo, Filippo, Roccaforte, Fabrizio, Poggi, Antonella, Solmi, Sandro, Raineri, Vito, Nipoti, Roberta

Journal:

Materials Science Forum

Year:

2007

Language:

english

File:

PDF, 329 KB

english, 2007

24

Phonon scattering enhancement in silicon nanolayers

Narducci, Dario, Cerofolini, Gianfranco, Ferri, Matteo, Suriano, Francesco, Mancarella, Fulvio, Belsito, Luca, Solmi, Sandro, Roncaglia, Alberto

Journal:

Journal of Materials Science

Year:

2013

Language:

english

File:

PDF, 433 KB

english, 2013

25

Nitridation of the SiO2/SiC Interface by N+ Implantation: Hall versus Field Effect Mobility in n-Channel Planar 4H-SiC MOSFETs

Moscatelli, Francesco, Poggi, Antonella, Solmi, Sandro, Nipoti, Roberta, Armigliato, Aldo, Belsito, Luca

Journal:

Materials Science Forum

Year:

2010

Language:

english

File:

PDF, 340 KB

english, 2010

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